All MOSFET. STM4432 Datasheet

 

STM4432 MOSFET. Datasheet pdf. Equivalent

Type Designator: STM4432

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm

Package: SOP8

STM4432 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STM4432 Datasheet (PDF)

1.1. stm4432.pdf Size:113K _samhop

STM4432
STM4432

Gre r r P Pr P P STM4432 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 11 @ VGS=10V Suface Mount Package. 40V 12A 15 @ VGS=4.5V SO-8 1 (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Paramet

4.1. stm4435.pdf Size:134K _samhop

STM4432
STM4432

Green Product S TM4435 S amHop Microelectronics C orp. J AN.20 2006 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 20 @ VG S = -10V -30V -8A S urface Mount Package. 33 @ VG S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE M

4.2. stm4433a.pdf Size:659K _samhop

STM4432
STM4432

 S T M4433A S amHop Microelectronics C orp. J an.25 2005 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S 5 S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V -6A S urface Mount Package. 55 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMU

 4.3. stm4437a.pdf Size:154K _samhop

STM4432
STM4432

STM4437A a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 15 @ VGS=-10V Suface Mount Package. -30V -10A 26 @ VGS=-4.5V D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM R

4.4. stm4439a.pdf Size:655K _samhop

STM4432
STM4432

 S T M4439A S amHop Microelectronics C orp. Dec 15.2004 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S 5 S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 10 @ V G S = -10V -30V -14A S urface Mount Package. 18 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMU

Datasheet: FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , FDP2614 , STM4433A , FDP26N40 , 75339P , FDP2710 , FDP2710_F085 , FDP33N25 , FDP3651U , STM4410A , FDP3672 , FDP3682 , STM301N .

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