All MOSFET. FDS5670 Datasheet

 

FDS5670 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS5670

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: SOIC

FDS5670 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS5670 Datasheet (PDF)

1.1. fds5670.pdf Size:121K _fairchild_semi

FDS5670
FDS5670

August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 10 A, 60 V. RDS(ON) = 0.014 ? @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.017 ? @ VGS = 6 V. either synchronous or conventional switching PWM controllers. • Low gate charge. These MOSFETs feature faster switchi

4.1. fds5672.pdf Size:455K _fairchild_semi

FDS5670
FDS5670

July 2005 FDS5672 N-Channel PowerTrench® MOSFET 60V, 12A, 10m? Features General Description rDS(ON) = 10m?, VGS = 10V, ID = 12A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 14m?, VGS = 6V, ID = 10A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

 5.1. fds5682.pdf Size:515K _upd-mosfet

FDS5670
FDS5670

May 2008 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mΩ Features General Description rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A either synchronous or conventional switching PWM controllers. It has been optimized for low g

5.2. fds5692z.pdf Size:118K _upd-mosfet

FDS5670
FDS5670

February 2006 FDS5692Z N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ Features General Description Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A converters using either synchronous or conventional switching PWM controller

 5.3. fds5680.pdf Size:132K _fairchild_semi

FDS5670
FDS5670

July 1999 FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild • 8 A, 60 V. RDS(ON) = 0.020 ? @ VGS = 10 V Semiconductor's advanced PowerTrench process that RDS(ON) = 0.025 ? @ VGS = 6 V. has been especially tailored to minimize on-state resistance and yet maintain superior switching • Low gate charge (30nC typical). p

5.4. fds5690.pdf Size:103K _fairchild_semi

FDS5670
FDS5670

March 2000 FDS5690 ? ? ? ? 60V N-Channel PowerTrench? MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild • 7 A, 60 V. RDS(on) = 0.028 ? @ VGS = 10 V Semiconductor's advanced PowerTrench process that RDS(on) = 0.033 ? @ VGS = 6 V. has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • Low gat

Datasheet: FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , FDS5351 , APT50M38JLL , FDS5672 , FDS6294 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS , STA6968 .

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