HGK320N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGK320N20S
Marking Code: GK320N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 51 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 124 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-247
HGK320N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK320N20S Datasheet (PDF)
..1. Size:875K cn hunteck
hgb320n20s hgk320n20s hgp320n20s.pdf
hgb320n20s hgk320n20s hgp320n20s.pdf
,HGB320N20S HGP320N20S P-1HGK320N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power SwitchingTO-263 28RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 28RDS(on),typ m Enhanced Avalanche RuggednessTO-220 28RDS(on),typ m 100% UIS Tested, 100% Rg Tested51 AID Lead FreeApplication Synchronous Rectification in SMPS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
