All MOSFET. HGK320N20S Datasheet

 

HGK320N20S Datasheet and Replacement


   Type Designator: HGK320N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-247
 

 HGK320N20S substitution

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HGK320N20S Datasheet (PDF)

 ..1. Size:875K  cn hunteck
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HGK320N20S

,HGB320N20S HGP320N20S P-1HGK320N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power SwitchingTO-263 28RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 28RDS(on),typ m Enhanced Avalanche RuggednessTO-220 28RDS(on),typ m 100% UIS Tested, 100% Rg Tested51 AID Lead FreeApplication Synchronous Rectification in SMPS

Datasheet: HGK210N20S , HGP210N20S , HGB220N25S , HGK220N25S , HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S , 4435 , HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S .

History: NCE0160AG | BUK9628-55A | BSS606N-P | SM2609PSC | TSJ10N10AT | AOI4130 | 2SK3575-Z

Keywords - HGK320N20S MOSFET datasheet

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 HGK320N20S equivalent finder
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