All MOSFET. FDS8949 Datasheet

 

FDS8949 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS8949

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.029 Ohm

Package: SOIC

FDS8949 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS8949 Datasheet (PDF)

1.1. fds8949.pdf Size:345K _fairchild_semi

FDS8949
FDS8949

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29m? Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m? at VGS = 10V using Fairchild Semiconductor’s advanced Max rDS(on) = 36m? at VGS = 4.5V PowerTrench® process that has been especially tailored Low gate charge to minimize the on-state resistance and yet

1.2. fds8949 f085.pdf Size:539K _fairchild_semi

FDS8949
FDS8949

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29m? Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m? at VGS = 10V using Fairchild Semiconductor’s advanced Max rDS(on) = 36m? at VGS = 4.5V PowerTrench® process that has been especially tailored Low gate charge to minimize the on-state resistance an

5.1. fds8958a.pdf Size:521K _fairchild_semi

FDS8949
FDS8949

April 2008 tm FDS8958A ? ? ? Dual N & P-Channel PowerTrench? MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028? @ VGS = 10V Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.040? @ VGS = 4.5V

5.2. fds8958b.pdf Size:1203K _fairchild_semi

FDS8949
FDS8949

 November 2013 FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description These dual N- and P-Channel enhancement mode power field Q1: N-Channel effect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A advanced PowerTrench® process th at

5.3. fds89161lz.pdf Size:277K _fairchild_semi

FDS8949
FDS8949

June 2011 FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

5.4. fds8984.pdf Size:384K _fairchild_semi

FDS8949
FDS8949

May 2007 FDS8984 tm N-Channel PowerTrench® MOSFET 30V, 7A, 23m? General Description Features Max rDS(on) = 23m?, VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m?, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for low gate c

5.5. fds8935.pdf Size:219K _fairchild_semi

FDS8949
FDS8949

November 2010 FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 m? Features General Description Max rDS(on) = 183 m? at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 247 m? at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedness. Hig

5.6. fds8984 f085.pdf Size:440K _fairchild_semi

FDS8949
FDS8949

Fabruary 2010 FDS8984_F085 tm N-Channel PowerTrench® MOSFET 30V, 7A, 23m? General Description Features Max rDS(on) = 23m?, VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m?, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

5.7. fds8926a.pdf Size:69K _fairchild_semi

FDS8949
FDS8949

February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 5.5 A, 30 V. RDS(ON) = 0.030 ? @ VGS = 4.5 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.038 ? @ VGS = 2.5 V. cell density, DMOS technology. This very high density process is especially tailored to pr

5.8. fds89161.pdf Size:260K _fairchild_semi

FDS8949
FDS8949

June 2011 FDS89161 Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 m? Features General Description Max rDS(on) = 105 m? at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 171 m? at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance trench te

5.9. fds8958a f085.pdf Size:798K _fairchild_semi

FDS8949
FDS8949

February 2010 tm FDS8958A_F085 ? ? ? Dual N & P-Channel PowerTrench? MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028? @ VGS = 10V Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.040? @ VGS

5.10. fds89141.pdf Size:240K _fairchild_semi

FDS8949
FDS8949

December 2010 FDS89141 Dual N-Channel PowerTrench® MOSFET 100 V, 3.5 A, 62 m? Features General Description Max rDS(on) = 62 m? at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 100 m? at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performance trench

5.11. fds8960c.pdf Size:159K _fairchild_semi

FDS8949
FDS8949

 November 2005 FDS8960C Dual N & P-Channel PowerTrench® MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench 7.0A, 35V RDS(on) = 0.024Ω @ VGS = 10V process that has been especially tailored to minimize RDS(on) = 0.032Ω @ VGS = 4.

5.12. fds8962c.pdf Size:674K _fairchild_semi

FDS8949
FDS8949

June 2006 FDS8962C Dual N & P-Channel PowerTrench® MOSFET Features General Description ¦ Q1: N-Channel These dual N- and P-Channel enhancement mode power field 7.0A, 30V RDS(on) = 0.030? @ VGS = 10V effect transistors are produced using Fairchild Semiconductor’s RDS(on) = 0.044? @ VGS = 4.5V advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and

5.13. fds8978.pdf Size:693K _fairchild_semi

FDS8949
FDS8949

January 2011 FDS8978 N-Channel PowerTrench® MOSFET 30V, 7.5A, 18m? Features General Description rDS(on) = 18m?, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 21m?, VGS = 4.5V, ID = 6.9A either synchronous or conventional switching PWM controllers. It has been optimized for low gate char

5.14. fds8928a.pdf Size:153K _fairchild_semi

FDS8949
FDS8949

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power N-Channel 5.5 A,30 V, RDS(ON)=0.030 ? @ VGS=4.5 V field effect transistors are produced using Fairchild's RDS(ON)=0.038 ? @ VGS=2.5 V. proprietary, high cell density, DMOS technology. This very P-Channel -4 A,-20 V, RDS(ON)=0.0

5.15. fds8934a.pdf Size:285K _fairchild_semi

FDS8949
FDS8949

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 ? @ VGS = -4.5 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 ? @ VGS = -2.5 V. cell density, DMOS technology. This very high density process is especially tailored to m

5.16. fds89161.pdf Size:2683K _kexin

FDS8949
FDS8949

SMD Type MOSFET N-Channel Enhancement MOSFET FDS89161 (KDS89161) SOP-8 ■ Features ● VDS (V) = 100V ● ID = 2.7 A ● RDS(ON) < 105mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 160mΩ (VGS = 4.5V) ● High performance trench technology for extremely low rDS(on) ● CDM ESD Protection Level > 2KV typical G2 D2 5 4 D2 S2 Q2 6 3 D1 G1 7 2 Q1 D1 8 1 S1 atings Ta = 25

Datasheet: FDS89161 , SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 , 40673 , FDS8949_F085 , FDS8958A_F085 , SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 .

 


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