All MOSFET. NCE65N520F Datasheet

 

NCE65N520F Datasheet and Replacement


   Type Designator: NCE65N520F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO-220F
 

 NCE65N520F substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE65N520F Datasheet (PDF)

 ..1. Size:731K  ncepower
nce65n520f.pdf pdf_icon

NCE65N520F

NCE65N520FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 5.1. Size:730K  ncepower
nce65n520.pdf pdf_icon

NCE65N520F

NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria

 5.2. Size:731K  ncepower
nce65n520d.pdf pdf_icon

NCE65N520F

NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 5.3. Size:736K  ncepower
nce65n520k.pdf pdf_icon

NCE65N520F

NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

Datasheet: NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K , NCE65N520 , NCE65N520D , IRFP260 , NCE65N520I , NCE65N520K , NCE65N760 , NCE65N760D , NCE65N760F , NCE65N760I , NCE65N760K , NCE65N800D .

History: AON6206 | IRFSL3107PBF | HMS21N60F | SI1013X

Keywords - NCE65N520F MOSFET datasheet

 NCE65N520F cross reference
 NCE65N520F equivalent finder
 NCE65N520F lookup
 NCE65N520F substitution
 NCE65N520F replacement

 

 
Back to Top

 


 
.