NCE65N520F Specs and Replacement

Type Designator: NCE65N520F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO-220F

NCE65N520F substitution

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NCE65N520F datasheet

 ..1. Size:731K  ncepower
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NCE65N520F

NCE65N520F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri... See More ⇒

 5.1. Size:730K  ncepower
nce65n520.pdf pdf_icon

NCE65N520F

NCE65N520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industria... See More ⇒

 5.2. Size:731K  ncepower
nce65n520d.pdf pdf_icon

NCE65N520F

NCE65N520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri... See More ⇒

 5.3. Size:736K  ncepower
nce65n520k.pdf pdf_icon

NCE65N520F

NCE65N520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri... See More ⇒

Detailed specifications: NCE65N330R, NCE65N460, NCE65N460D, NCE65N460F, NCE65N460I, NCE65N460K, NCE65N520, NCE65N520D, 2SK3878, NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F, NCE65N760I, NCE65N760K, NCE65N800D

Keywords - NCE65N520F MOSFET specs

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