All MOSFET. FQB33N10 Datasheet

 

FQB33N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB33N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 127 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 33 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm

Package: TO263_D2PAK

FQB33N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB33N10 Datasheet (PDF)

1.1. fqb33n10l fqi33n10l.pdf Size:1074K _fairchild_semi

FQB33N10
FQB33N10

October 2008 QFET® FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 33A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tai

1.2. fqb33n10 fqi33n10.pdf Size:938K _fairchild_semi

FQB33N10
FQB33N10

October 2008 QFET® FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 33A, 100V, RDS(on) = 0.052? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 62 pF) This advanced technology has been especially tailored to

Datasheet: FQB19N20L , SDD04N65 , FQB1P50 , FQB22P10 , FQB22P10TM_F085 , FQB25N33TM_F085 , FQB27P06 , FQB30N06L , IRF540 , SDD04N60 , FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 .

 


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