All MOSFET. FQD20N06 Datasheet

 

FQD20N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD20N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 16.8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.063 Ohm

Package: TO252_DPAK

FQD20N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD20N06 Datasheet (PDF)

1.1. fqd20n06l fqu20n06l.pdf Size:664K _fairchild_semi

FQD20N06
FQD20N06

May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 17.2A, 60V, RDS(on) = 0.06? @ VGS = 10V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tail

1.2. fqd20n06 fqu20n06.pdf Size:745K _fairchild_semi

FQD20N06
FQD20N06

January 2009 QFET® FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.8A, 60V, RDS(on) = 0.063? @ VGS = 10V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

Datasheet: FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 , IRF460 , FQD2N100 , FQD2N60C , FQPF3N25 , FQD2N80 , FQP4N20L , FQD2N90 , FQD2P40 , FQD30N06 .

 


FQD20N06
  FQD20N06
  FQD20N06
 

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