All MOSFET. FQP2N90 Datasheet

 

FQP2N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP2N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 7.2 Ohm

Package: TO220

FQP2N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP2N90 Datasheet (PDF)

1.1. fqp2n90.pdf Size:744K _fairchild_semi

FQP2N90
FQP2N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

5.1. fqp2n80.pdf Size:649K _fairchild_semi

FQP2N90
FQP2N90

September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.4A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fas

5.2. fqp2n40.pdf Size:989K _fairchild_semi

FQP2N90
FQP2N90

October 2013 FQP2N40 N-Channel QFET® MOSFET 400 V, 1.8 A, 5.8 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.8 A, 400 V, RDS(on) = 5.8 Ω (Max.) @ VGS = 10 V, ID = 0.9 A produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta

5.3. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi

FQP2N90
FQP2N90

April 2006 ® QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • rDS(on) = 4.7? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to • Fa

5.4. fqp2n50.pdf Size:717K _fairchild_semi

FQP2N90
FQP2N90

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 500V, RDS(on) = 5.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been especially t

Datasheet: FQP22N30 , FQP24N08 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , IRFB4227 , FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 .

 


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