All MOSFET. FQP6N40C Datasheet

 

FQP6N40C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP6N40C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 73 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220

FQP6N40C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP6N40C Datasheet (PDF)

1.1. fqp6n40c fqpf6n40c.pdf Size:851K _fairchild_semi

FQP6N40C
FQP6N40C

TM QFET FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switchi

1.2. fqp6n40cf fqpf6n40cf.pdf Size:1088K _fairchild_semi

FQP6N40C
FQP6N40C

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS(on) = 1.1 ? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 15pF) mi

5.1. fqp6n60c.pdf Size:931K _fairchild_semi

FQP6N40C
FQP6N40C

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

5.2. fqp6n60c fqpf6n60c.pdf Size:931K _fairchild_semi

FQP6N40C
FQP6N40C

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to • Fast switch

5.3. fqp6n25.pdf Size:722K _fairchild_semi

FQP6N40C
FQP6N40C

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.5A, 250V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especially tail

5.4. fqp6n70.pdf Size:763K _fairchild_semi

FQP6N40C
FQP6N40C

April 2000 TM QFET QFET QFET QFET 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.2A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has bee

5.5. fqp6n80.pdf Size:674K _fairchild_semi

FQP6N40C
FQP6N40C

September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 800V, RDS(on) = 1.95? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to • Fas

5.6. fqp6n60.pdf Size:536K _fairchild_semi

FQP6N40C
FQP6N40C

April 2000 TM QFET QFET QFET QFET FQP6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.2A, 600V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailo

5.7. fqp6n80c fqpf6n80c.pdf Size:889K _fairchild_semi

FQP6N40C
FQP6N40C

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 800V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 8 pF) This advanced technology has been especially tailored to • Fast switc

5.8. fqp6n90c fqpf6n90c.pdf Size:860K _fairchild_semi

FQP6N40C
FQP6N40C

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 900V, RDS(on) = 2.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switch

Datasheet: FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , FQP65N06 , 2SK105 , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , FQD4P25TM_WS , FQP6N90C , FQP70N10 , FCP20N60 .

 


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