All MOSFET. 2N6766 Datasheet

 

2N6766 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6766

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO204

2N6766 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6766 Datasheet (PDF)

1.1. 2n6766 irf250.pdf Size:145K _international_rectifier

2N6766
2N6766

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing

1.2. 2n6764 2n6766 2n6768 2n6770.pdf Size:64K _omnirel

2N6766
2N6766

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/543 DESCRIPTION This he

5.1. 2n6761.pdf Size:137K _fairchild_semi

2N6766
2N6766

5.2. 2n6765.pdf Size:142K _fairchild_semi

2N6766
2N6766

5.3. 2n6767.pdf Size:140K _fairchild_semi

2N6766
2N6766

5.4. 2n6763.pdf Size:140K _fairchild_semi

2N6766
2N6766

5.5. 2n6769.pdf Size:137K _fairchild_semi

2N6766
2N6766

5.6. 2n6762 irf430.pdf Size:146K _international_rectifier

2N6766
2N6766

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 ? 4.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.7. 2n6760 irf330.pdf Size:146K _international_rectifier

2N6766
2N6766

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00? 5.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.8. 2n6768 irf350.pdf Size:144K _international_rectifier

2N6766
2N6766

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET?TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300? 14A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

Datasheet: 2N6763 , 2N6764 , 2N6764JAN , 2N6764JANTX , 2N6764JANTXV , 2N6764JTX , 2N6764JTXV , 2N6765 , IRF9640 , 2N6766JAN , 2N6766JANTX , 2N6766JANTXV , 2N6766JTX , 2N6766JTXV , 2N6767 , 2N6768 , 2N6768JAN .

 


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  2N6766
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