All MOSFET. FQPF16N25C Datasheet

 

FQPF16N25C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF16N25C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 15.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO220F

FQPF16N25C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF16N25C Datasheet (PDF)

1.1. fqp16n25c fqpf16n25c.pdf Size:1162K _fairchild_semi

FQPF16N25C
FQPF16N25C

® QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 250V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 68 pF) This advanced technology has been especially tailored to • Fast s

3.1. fqpf16n15.pdf Size:722K _fairchild_semi

FQPF16N25C
FQPF16N25C

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 11.6A, 150V, RDS(on) = 0.16? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 23 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially

5.1. fqp11n50cf fqpf11n50cf.pdf Size:1291K _fairchild_semi

FQPF16N25C
FQPF16N25C

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS(on) = 0.55? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tailored to mini

5.2. fqpf19n20.pdf Size:691K _fairchild_semi

FQPF16N25C
FQPF16N25C

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 11.8A, 200V, RDS(on) = 0.15? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially

5.3. fqpf11p06.pdf Size:643K _fairchild_semi

FQPF16N25C
FQPF16N25C

® QFET FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -8.6A, -60V, RDS(on) = 0.175? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching

5.4. fqpf1p50.pdf Size:564K _fairchild_semi

FQPF16N25C
FQPF16N25C

December 2000 TM QFET QFET QFET QFET FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.03A, -500V, RDS(on) = 10.5? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especially t

5.5. fqp12n60c fqpf12n60c .pdf Size:1170K _fairchild_semi

FQPF16N25C
FQPF16N25C

September 2007 ® QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially tailored to

5.6. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

FQPF16N25C
FQPF16N25C

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 16pF) This advanced technology has been espe

5.7. fqp13n50cf fqpf13n50cf.pdf Size:1148K _fairchild_semi

FQPF16N25C
FQPF16N25C

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS(on) = 0.54? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tailored to mi

5.8. fqpf19n10.pdf Size:581K _fairchild_semi

FQPF16N25C
FQPF16N25C

August 2000 TM QFET QFET QFET QFET FQPF19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 100V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially t

5.9. fqp15p12 fqpf15p12.pdf Size:852K _fairchild_semi

FQPF16N25C
FQPF16N25C

® QFET FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -15A, -120V, RDS(on) = 0.2? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 110 pF) This advanced technology has been especially tailored to • Fast sw

5.10. fqp19n20c fqpf19n20c.pdf Size:1168K _fairchild_semi

FQPF16N25C
FQPF16N25C

® QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19.0A, 200V, RDS(on) = 0.17? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially tailored to • Fast

5.11. fqpf13n06l.pdf Size:669K _fairchild_semi

FQPF16N25C
FQPF16N25C

May 2001 TM QFET FQPF13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 60V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to • Fa

5.12. fqpf13n50c.pdf Size:1062K _fairchild_semi

FQPF16N25C
FQPF16N25C

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

5.13. fqp10n20c fqpf10n20c.pdf Size:875K _fairchild_semi

FQPF16N25C
FQPF16N25C

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailored to • Fast

5.14. fqpf17n40.pdf Size:728K _fairchild_semi

FQPF16N25C
FQPF16N25C

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.5A, 400V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially

5.15. fqp11n40c fqpf11n40c.pdf Size:1216K _fairchild_semi

FQPF16N25C
FQPF16N25C

May 2008 ® QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS(on) = 0.5 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 28 nC) DMOS technology. • Low Crss ( typical 85pF) This advanced technology has been especially tailored to m

5.16. fqpf12n60.pdf Size:549K _fairchild_semi

FQPF16N25C
FQPF16N25C

April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 600V, RDS(on) = 0.7 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially t

5.17. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi

FQPF16N25C
FQPF16N25C

April 2007 ® QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 44 nC) DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especiall

5.18. fqp13n50c fqpf13n50c.pdf Size:922K _fairchild_semi

FQPF16N25C
FQPF16N25C

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored to • Fast swi

5.19. fqpf13n06.pdf Size:660K _fairchild_semi

FQPF16N25C
FQPF16N25C

May 2001 TM QFET FQPF13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.4A, 60V, RDS(on) = 0.135? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast sw

5.20. fqp13n50 fqpf13n50.pdf Size:883K _fairchild_semi

FQPF16N25C
FQPF16N25C

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.5A, 500V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast sw

5.21. fqpf12n60c.pdf Size:1123K _fairchild_semi

FQPF16N25C
FQPF16N25C

November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored

Datasheet: FQPF11N40C , FDU6N50 , FQPF11N50CF , FQPF11P06 , FQPF13N06L , FQPF13N50CF , FQPF15P12 , FQPF16N15 , IRF520 , FQPF17N40 , FDS8690 , FQPF19N10 , FDD20AN06_F085 , FQPF19N20 , HUF76429D_F085 , FQPF19N20C , FCU5N60 .

 


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