All MOSFET. FQPF9N90C Datasheet

 

FQPF9N90C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF9N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220F

FQPF9N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF9N90C Datasheet (PDF)

1.1. fqp9n90c fqpf9n90c.pdf Size:842K _fairchild_semi

FQPF9N90C
FQPF9N90C

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0 A, 900V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45nC) planar stripe, DMOS technology. • Low Crss ( typical 14pF) This advanced technology has been especially tailored to • Fast swit

4.1. fqpf9n50c.pdf Size:770K _fairchild_semi

FQPF9N90C
FQPF9N90C

November 2013 FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

4.2. fqp9n25c fqpf9n25c.pdf Size:1136K _fairchild_semi

FQPF9N90C
FQPF9N90C

® QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.8A, 250V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 45.5 pF) This advanced technology has been especially tailored to • Fast

 4.3. fqpf9n50cf.pdf Size:765K _fairchild_semi

FQPF9N90C
FQPF9N90C

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS(on) = 0.85? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 28 nC) DMOS technology. • Low Crss (typical 24pF) This advanced technology has been especially tailored to mini- • Fast

4.4. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQPF9N90C
FQPF9N90C

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to • Fast swit

Datasheet: FDD24AN06L_F085 , FQPF8N60CF , FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , BUK455-200A , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L .

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