All MOSFET. ZXMN3G32DN8 Datasheet

 

ZXMN3G32DN8 MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMN3G32DN8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 7.1 A

Drain-Source Capacitance (Cd): 472 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: SO8

ZXMN3G32DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3G32DN8 Datasheet (PDF)

1.1. zxmn3g32dn8.pdf Size:444K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.028 @ VGS= 10V 7.1 0.045 @ VGS= 4.5V 5.6 Description This new generation Trench MOSFET from Zetex features low on- resistance and fast switching speed. Features D1 D2 Low on-resistance 4.5V gate drive capability G1 G2 Fast switching bullet Applications S1 S2 DC-DC Converters

5.1. zxmn3f30fh.pdf Size:411K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power management func

5.2. zxmn3a06dn8.pdf Size:187K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resistance

 5.3. zxmn3a14f.pdf Size:215K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V : RDS(on)=0.065 ; ID=3.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-resistance Fast

5.4. zxmn3b14f.pdf Size:217K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES PACKAGE Low on-res

 5.5. zxmn3a03e6.pdf Size:191K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistance

5.6. zxmn3a02x8.pdf Size:454K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching

5.7. zxmn3a02n8.pdf Size:180K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance Fas

5.8. zxmn3a01f.pdf Size:193K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-resistance Fast

5.9. zxmn3am832.pdf Size:561K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

OBSOLETE - PLEASE USE ZXMN3AMCTA ZXMN3AM832 MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching

5.10. zxmn3b04n8.pdf Size:166K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-res

5.11. zxmn3amc.pdf Size:654K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low R?JA, thermally efficient package V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switching speed 120m? @ VGS = 1

5.12. zxmn3f31dn8.pdf Size:427K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (?) ID (A) 30 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D1 D2 Low on-resistance 4.5V gate drive capability G1 G2 Applications DC-DC Converters S1 S2 Power manageme

5.13. zxmn3b01f.pdf Size:469K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-resista

5.14. zxmn3a04dn8.pdf Size:188K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resistance

5.15. zxmn3a04k.pdf Size:150K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A04K 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES DPAK Low on-resistance

5.16. zxmn3a01e6.pdf Size:225K _diodes

ZXMN3G32DN8
ZXMN3G32DN8

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistance

5.17. zxmn3f30fh.pdf Size:106K _tysemi

ZXMN3G32DN8
ZXMN3G32DN8

Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low on- resistance achievable with 4.5V gate drive. Features D • Low on-resistance • 4.5V gate drive capability • SOT23 G Applications S • DC-DC Con

5.18. zxmn3a14f.pdf Size:194K _tysemi

ZXMN3G32DN8
ZXMN3G32DN8

Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low on-resistance Max ID • Fast switching speed BVDSS Max RDS(on) TA = 25°C • Low gate charge (Note 4) • Low threshold • Totally Lead-Free & Fully RoHS compliant (Note 1) 65mΩ @ VGS = 10V 3.2A • Halogen and Antimony Free. “Green” Device (Note 2

5.19. zxmn3b14f.pdf Size:79K _tysemi

ZXMN3G32DN8
ZXMN3G32DN8

Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

5.20. zxmn3a01f.pdf Size:104K _tysemi

ZXMN3G32DN8
ZXMN3G32DN8

Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 •

5.21. zxmn3b01f.pdf Size:91K _tysemi

ZXMN3G32DN8
ZXMN3G32DN8

Product specification ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

Datasheet: ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , ZXMN3F318DN8 , ZXMN3F31DN8 , APT50M38JFLL , 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC .

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