All MOSFET. 2SK876 Datasheet

 

2SK876 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK876

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 2000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: TO247

2SK876 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK876 Datasheet (PDF)

5.1. 2sk871.pdf Size:1651K _update

2SK876
2SK876



5.2. 2sk870.pdf Size:148K _update

2SK876
2SK876

查询"2SK870"供应商 查询"2SK870"供应商

5.3. 2sk874.pdf Size:3392K _update

2SK876
2SK876



5.4. 2sk873.pdf Size:1661K _update

2SK876
2SK876



5.5. 2sk872.pdf Size:3390K _update

2SK876
2SK876



5.6. 2sk879.pdf Size:576K _toshiba

2SK876
2SK876

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k?, f = 120 Hz) Small package Absolute Maximum Ratings (Ta = 25C) Chara

Datasheet: 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , IRF5305 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 , 2SK903 , 2SK904 .

 


2SK876
  2SK876
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