ATP113 MOSFET. Datasheet pdf. Equivalent
Type Designator: ATP113
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 55 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0225 Ohm
Package: ATPAK
ATP113 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ATP113 Datasheet (PDF)
1.1. atp113.pdf 
Size:358K _sanyo
ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP113 Applications Features ON-resistance RDS(on)1=22.5m (typ.) Input Capacitance Ciss=2400pF(typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Vol
5.1. atp112.pdf Size:358K _sanyo
ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP112 Applications Features ON-resistance RDS(on)1=33m (typ.) Input Capacitance Ciss=1450pF(typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Volta
5.2. atp114.pdf Size:358K _sanyo
ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP114 Applications Features ON-resistance RDS(on)1=12m (typ.) Input Capacitance Ciss=4000pF(typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Volta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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