All MOSFET. ECH8663R Datasheet

 

ECH8663R MOSFET. Datasheet pdf. Equivalent

Type Designator: ECH8663R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0155 Ohm

Package: ECH8

ECH8663R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ECH8663R Datasheet (PDF)

1.1. ech8663r.pdf Size:73K _sanyo

ECH8663R
ECH8663R

Ordering number : ENA1184 ECH8663R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8663R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Pa

4.1. ech8660.pdf Size:494K _sanyo

ECH8663R
ECH8663R

ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8660 Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance Spe

4.2. ech8661.pdf Size:436K _sanyo

ECH8663R
ECH8663R

ECH8661 Ordering number : ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8661 Applications Features • ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) Ω Ω • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

4.3. ech8664r.pdf Size:65K _sanyo

ECH8663R
ECH8663R

Ordering number : ENA1185 ECH8664R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8664R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Pa

4.4. ech8668.pdf Size:369K _sanyo

ECH8663R
ECH8663R

ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8668 Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. • 1.8V drive. • Halogen free compliance.

4.5. ech8662.pdf Size:67K _sanyo

ECH8663R
ECH8663R

Ordering number : ENA1259 ECH8662 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8662 Applications Features Low ON-resistance. 2.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS 10 V Drain Cu

4.6. ech8667.pdf Size:355K _sanyo

ECH8663R
ECH8663R

ECH8667 Ordering number : ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8667 Applications Features ON-resistance RDS(on)1=30m (typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage

Datasheet: ECH8653 , ECH8654 , ECH8655R , ECH8657 , ECH8659 , ECH8660 , ECH8661 , ECH8662 , IRF740 , ECH8664R , ECH8667 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , EMH1307 , EMH1405 .

 


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