All MOSFET. NTMFS4846 Datasheet

 

NTMFS4846 MOSFET. Datasheet pdf. Equivalent

Type Designator: NTMFS4846

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Drain Current |Id|: 20.3 A

Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm

Package: SO8FL_DFN5

NTMFS4846 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4846 Datasheet (PDF)

1.1. ntmfs4846n.pdf Size:137K _onsemi

NTMFS4846
NTMFS4846

NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application Note AND8195/D 3

2.1. ntmfs4841nh.pdf Size:138K _onsemi

NTMFS4846
NTMFS4846

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A CPU Power D

2.2. ntmfs4845n.pdf Size:137K _onsemi

NTMFS4846
NTMFS4846

NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application Note AND8195/D

2.3. ntmfs4847n.pdf Size:136K _onsemi

NTMFS4846
NTMFS4846

NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application Note AND8195/D 3

2.4. ntmfs4841n.pdf Size:145K _onsemi

NTMFS4846
NTMFS4846

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.5 V CPU P

2.5. ntmfs4849n.pdf Size:137K _onsemi

NTMFS4846
NTMFS4846

NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Note AND8195/D 30

Datasheet: NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , NTMFS4841N , NTMFS4845 , IRF9540N , NTMFS4847N , NTMFS4851 , NTMFS4852N , NTMFS4854NS , NTMFS4897N , NTMFS4898N , NTMFS4899N , NTMFS4921N .

 


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