All MOSFET. FCP190N65F Datasheet

 

FCP190N65F MOSFET. Datasheet pdf. Equivalent

Type Designator: FCP190N65F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO220

FCP190N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP190N65F Datasheet (PDF)

1.1. fcp190n65f.pdf Size:998K _fairchild_semi

FCP190N65F
FCP190N65F

August 2014 FCP190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 168 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 60 nC)

2.1. fcp190n60e.pdf Size:641K _fairchild_semi

FCP190N65F
FCP190N65F

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 160 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charg

2.2. fcp190n60 gf102.pdf Size:657K _fairchild_semi

FCP190N65F
FCP190N65F

December 2013 FCP190N60_GF102 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 170 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 57 nC)

2.3. fcp190n60.pdf Size:650K _fairchild_semi

FCP190N65F
FCP190N65F

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 170 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 5

Datasheet: FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , IRFP260N , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360_F085 , IXFA102N15T , IXFA10N60P , IXFA10N80P , IXFA110N15T2 .

 


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