All MOSFET. IXFB170N30P Datasheet

 

IXFB170N30P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFB170N30P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1250 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 170 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: PLUS264

IXFB170N30P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFB170N30P Datasheet (PDF)

5.1. ixfb100n50p.pdf Size:173K _ixys

IXFB170N30P
IXFB170N30P

IXFB 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 49 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V (TAB) G VGSM Transient 40 V D S

5.2. ixfb150n65x2.pdf Size:109K _ixys

IXFB170N30P
IXFB170N30P

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFB150N65X2 Power MOSFET ID25 = 150A   RDS(on)  17m       N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G D VDGR TJ = 25C to 150C, RGS = 1M 650 V S Tab VGSS Continuous  30

Datasheet: IXFA76N15T2 , IXFA7N100P , IXFA7N80P , IXFB100N50P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 , 2SK2837 , IXFB210N20P , IXFB300N10P , IXFB30N120P , IXFB38N100Q2 , IXFB40N110P , IXFB44N100P , IXFB44N100Q3 , IXFB50N80Q2 .

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