All MOSFET. IXFC30N60P Datasheet

 

IXFC30N60P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFC30N60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 166 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: ISOPLUS220

IXFC30N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFC30N60P Datasheet (PDF)

1.1. ixfc30n60p ixfr30n60p.pdf Size:135K _ixys

IXFC30N60P
IXFC30N60P

IXFC 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFR 30N60P ID25 = 15 A Power MOSFET ? ? RDS(on) ? 250 m? ? ? ? ? ? ? Electrically Isolated Back Surface ? trr ? 250 ns ? ? ? N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25C to 150C 600 V E153432 VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS

5.1. ixfc36n50p ixfr36n50p.pdf Size:248K _ixys

IXFC30N60P
IXFC30N60P

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET ? ? RDS(on) ? 190 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V

Datasheet: IXFC15N80Q , IXFC16N50P , IXFC16N80P , IXFC20N80P , IXFC22N60P , IXFC24N50 , IXFC26N50 , IXFC26N50P , IRF2807 , IXFC36N50P , IXFC52N30P , IXFC60N20 , IXFC74N20P , IXFC80N085 , IXFC96N15P , IXFE180N10 , IXFE180N20 .

 


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