All MOSFET. IXFH36N55Q Datasheet

 

IXFH36N55Q MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH36N55Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO247

IXFH36N55Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH36N55Q Datasheet (PDF)

2.1. ixfh36n50p ixft36n50p ixfv36n50p.pdf Size:338K _ixys

IXFH36N55Q
IXFH36N55Q

IXFH 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFT 36N50P ID25 = 36 A Power MOSFET IXFV 36N50P RDS(on) ? 170 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 36N50PS trr ? 200 ms ? ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 500 V D (TAB) VGS Continuous

3.1. ixfh36n60p ixft36n60p ixfk36n60p.pdf Size:268K _ixys

IXFH36N55Q
IXFH36N55Q

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET ? ? IXFT 36N60P RDS(on) ? 190 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V G D VGSM Trans

5.1. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys

IXFH36N55Q
IXFH36N55Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ? 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25C 30N

5.2. ixfh320n10t2 ixft320n10t2.pdf Size:186K _ixys

IXFH36N55Q
IXFH36N55Q

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFH320N10T2 ID25 = 320A Power MOSFET IXFT320N10T2 ? ? RDS(on) ? ? ? 3.5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M? 100 V TO-268 (IXFT) VGSS Continuou

5.3. ixfh340n075t2 ixft340n075t2.pdf Size:182K _ixys

IXFH36N55Q
IXFH36N55Q

Advance Technical Information TrenchT2TM HiPerFETTM VDSS = 75V IXFH340N075T2 ID25 = 340A Power MOSFET IXFT340N075T2 ? ? RDS(on) ? ? ? 3.2m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (TAB) S VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C, RGS = 1M? 75 V VGSM Transient 20 V TO-268 (

5.4. ixfh30n50p ixft30n50p ixfv30n50p.pdf Size:320K _ixys

IXFH36N55Q
IXFH36N55Q

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXFV 30N50P N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Conti

5.5. ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf Size:168K _ixys

IXFH36N55Q
IXFH36N55Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 35 N30 300 V 35 A 100 mW Power MOSFETs IXFH 40 N30 300 V 40 A 85 mW IXFM 40 N30 300 V 40 A 88 mW N-Channel Enhancement Mode trr ? 200 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 MW 300 V (TAB) VGS Continuous 20 V VGSM Transient 30

5.6. ixfh30n60p ixfv30n60p ixft30n60p.pdf Size:324K _ixys

IXFH36N55Q
IXFH36N55Q

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXFV 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV 30N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V DS D (TAB) VGSS Conti

5.7. ixfh32n50q ixft32n50q.pdf Size:567K _ixys

IXFH36N55Q
IXFH36N55Q

IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs ? 500 V 32 A 0.16 ? ? ? ? ? 500 V 32 A 0.16 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V VGSM Transie

Datasheet: IXFH30N40Q , IXFH30N50P , IXFH30N50Q3 , IXFH30N60P , IXFH30N60Q , IXFH320N10T2 , IXFH340N075T2 , IXFH36N50P , IRFB3306 , IXFH36N55Q2 , IXFH36N60P , IXFH400N075T2 , IXFH40N50Q , IXFH40N50Q2 , IXFH42N50P2 , IXFH42N60P3 , IXFH44N50P .

 


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