All MOSFET. IXFN44N50Q Datasheet

 

IXFN44N50Q MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFN44N50Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 481 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: SOT227B

IXFN44N50Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN44N50Q Datasheet (PDF)

1.1. ixfn44n50u2-u3 ixfn48n50u2-u3.pdf Size:151K _ixys

IXFN44N50Q
IXFN44N50Q

VDSS ID (cont) RDS(on) trr HiPerFETTM 500 V 44 A 0.12 W 35 ns IXFN44N50U2 IXFN44N50U3 Power MOSFETs IXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 Preliminary data 4 1 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VDSS TJ = 25°C to 150°C 500 V 2 VDGR TJ = 25°C to 150°C; RGS = 1 MW 5

1.2. ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf Size:108K _ixys

IXFN44N50Q
IXFN44N50Q

VDSS ID25 RDS(on) HiPerFETTM ? ? IXFK / IXFN 44 N50 500 V 44 A 0.12 ? ? ? Power MOSFETs ? IXFK / IXFN 48 N50 500 V 48 A 0.10 ? ? ? ? ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25C to 150C 500 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 500 V G (

 3.1. ixfn44n80.pdf Size:138K _ixys

IXFN44N50Q
IXFN44N50Q

IXFN 44N80 VDSS = 800 V HiPerFETTM ID25 = 44 A Power MOSFETs Ω RDS(on) = 0.165 Ω Ω Ω Ω Single MOSFET Die D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25°C to 150°C 800 V E153432 S VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V G VGS Continuous ±20 V VGSM Tran

3.2. ixfn44n60.pdf Size:128K _ixys

IXFN44N50Q
IXFN44N50Q

HiPerFETTM IXFN 44N60 VDSS = 600 V Power MOSFETs ID25 = 44 A Single Die MOSFET RDS(on) = 130 mW D trr £ 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25°C to 150°C 600 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V G VGS Continuous ±20 V VGSM Transient ±30 V S I

Datasheet: IXFN38N100P , IXFN38N100Q2 , IXFN38N80Q2 , IXFN40N110P , IXFN40N90P , IXFN420N10T , IXFN44N100P , IXFN44N100Q3 , IRF540N , IXFN44N80P , IXFN44N80Q3 , IXFN48N50Q , IXFN48N50U2 , IXFN48N55 , IXFN48N60P , IXFN50N80Q2 , IXFN520N075T2 .

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