All MOSFET. IXFP10N80P Datasheet

 

IXFP10N80P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP10N80P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO220

IXFP10N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFP10N80P Datasheet (PDF)

5.1. ixfa110n15t2 ixfp110n15t2.pdf Size:204K _ixys

IXFP10N80P
IXFP10N80P

Preliminary Technical Information TrenchT2TM HiperFET VDSS = 150V IXFA110N15T2 ID25 = 110A Power MOSFET IXFP110N15T2 ? ? RDS(on) ? ? ? 13m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25C to 175C 150 V (TAB) VDGR TJ = 25C to 175C, RGS = 1M? 150 V TO-220 VGSS Continuous 20 V VGSM Transient 30 V ID25 TC

5.2. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

IXFP10N80P
IXFP10N80P

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V S (TAB) VGS Continuous 30 V VGSM Tranisent 40 V TO-247 (I

5.3. ixfa180n10t2 ixfp180n10t2.pdf Size:208K _ixys

IXFP10N80P
IXFP10N80P

Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 ? ? RDS(on) ? ? ? 6m? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V TO-220AB (IXFP) VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSS Co

5.4. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys

IXFP10N80P
IXFP10N80P

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 4

Datasheet: IXFN80N50Q2 , IXFN80N50Q3 , IXFN80N60P3 , IXFN82N60P , IXFN82N60Q3 , IXFP05N100M , IXFP102N15T , IXFP10N60P , IRFP4332 , IXFP110N15T2 , IXFP12N50P , IXFP12N50PM , IXFP130N10T , IXFP130N10T2 , IXFP14N60P , IXFP16N50P , IXFP180N10T2 .

 


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