All MOSFET. IXFQ28N60P3 Datasheet

 

IXFQ28N60P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFQ28N60P3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 695 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: TO3P

IXFQ28N60P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFQ28N60P3 Datasheet (PDF)

1.1. ixfq28n60p3 ixfh28n60p3.pdf Size:130K _ixys

IXFQ28N60P3
IXFQ28N60P3

Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 260mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-247 ( IX

Datasheet: IXFP7N80P , IXFP7N80PM , IXFP8N50PM , IXFQ10N80P , IXFQ12N80P , IXFQ14N80P , IXFQ22N60P3 , IXFQ24N50P2 , BUZ10 , IXFQ50N60P3 , IXFQ60N50P3 , IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P , IXFR14N100Q2 , IXFR150N15 .

 


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