All MOSFET. IXFT44N50P Datasheet

 

IXFT44N50P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFT44N50P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 650 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO268

IXFT44N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFT44N50P Datasheet (PDF)

1.1. ixfh44n50p ixfk44n50p ixft44n50p.pdf Size:296K _ixys

IXFT44N50P
IXFT44N50P

IXFH 44N50P VDSS = 500 V PolarHVTM HiPerFET IXFK 44N50P ID25 = 44 A Power MOSFET IXFT 44N50P RDS(on) ? 140 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 500 V VGSM Transient 40 V (TAB) VGSM Co

5.1. ixfh42n50p2 ixft42n50p2.pdf Size:127K _ixys

IXFT44N50P
IXFT44N50P

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH42N50P2 ID25 = 42A Power MOSFET IXFT42N50P2 ? ? RDS(on) ? ? ? 145m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G D Symbol Test Conditions Maximum Ratings D (Tab) S VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M? 500 V TO-268 (IXFT) VGSS Continuous 3

5.2. ixfh4n100q ixft4n100q.pdf Size:87K _ixys

IXFT44N50P
IXFT44N50P

IXFH 4N100Q VDSS = 1000 V HiPerFETTM IXFT 4N100Q ID25 = 4 A Power MOSFETs RDS(on) = 3.0 W Q-Class trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 MW 1000 V VGS Continuous 20 V G (TAB) D VGSM Transient 30 V S

5.3. ixfh40n50q ixft40n50q.pdf Size:123K _ixys

IXFT44N50P
IXFT44N50P

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs ? RDS(on) = 0.14 ? ? ? ? Q-Class ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V (TA

5.4. ixfh40n30q ixft40n30q.pdf Size:50K _ixys

IXFT44N50P
IXFT44N50P

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V G (TAB) VGSM Transie

5.5. ixfh400n075t2-ixft400n075t2.pdf Size:188K _ixys

IXFT44N50P
IXFT44N50P

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 75V IXFH400N075T2 ID25 = 400A Power MOSFET IXFT400N075T2 ? ? RDS(on) ? ? ? 2.3m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C, RGS = 1M? 75 V VGSS Continuous 20 V VGSM Tr

Datasheet: IXFT30N50Q3 , IXFT30N60P , IXFT320N10T2 , IXFT340N075T2 , IXFT36N50P , IXFT36N60P , IXFT400N075T2 , IXFT42N50P2 , IRFP250N , IXFT50N30Q3 , IXFT50N60P3 , IXFT52N50P2 , IXFT58N20 , IXFT60N20 , IXFT60N20F , IXFT60N50P3 , IXFT66N20Q .

 


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