All MOSFET. IXFX64N60P Datasheet

 

IXFX64N60P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFX64N60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1040 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.096 Ohm

Package: PLUS247

IXFX64N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX64N60P Datasheet (PDF)

1.1. ixfk64n60p ixfx64n60p.pdf Size:169K _ixys

IXFX64N60P
IXFX64N60P

IXFK 64N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 64N60P ID25 = 64 A Power MOSFET ? ? RDS(on) ? 96 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D

3.1. ixfk64n50p ixfx64n50p.pdf Size:225K _ixys

IXFX64N60P
IXFX64N60P

IXFK 64N50P VDSS = 500 V PolarHVTM HiPerFET IXFX 64N50P ID25 = 64 A Power MOSFET ? ? RDS(on) ? 85 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V G VGSM Transient 40 V D (T

Datasheet: IXFX48N60Q3 , IXFX520N075T2 , IXFX52N60Q2 , IXFX55N50F , IXFX60N55Q2 , IXFX62N25 , IXFX64N50P , IXFX64N50Q3 , 2N5485 , IXFX64N60P3 , IXFX64N60Q3 , IXFX66N50Q2 , IXFX73N30Q , IXFX74N50P2 , IXFX78N50P3 , IXFX80N50P , IXFX80N50Q3 .

 


IXFX64N60P
  IXFX64N60P
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