All MOSFET. IXTC200N075T Datasheet

 

IXTC200N075T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTC200N075T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Drain Current |Id|: 110 A

Rise Time (tr): 80 nS

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: ISOPLUS220

IXTC200N075T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTC200N075T Datasheet (PDF)

5.1. ixtc280n055t.pdf Size:186K _ixys

IXTC200N075T
IXTC200N075T

Preliminary Technical Information IXTC280N055T VDSS = 55 V TrenchMVTM ID25 = 145 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1

5.2. ixtc26n50p.pdf Size:175K _ixys

IXTC200N075T
IXTC200N075T

IXTC 26N50P VDSS = 500 V PolarHVTM ID25 = 15 A Power MOSFET ? ? RDS(on) ? 260 m? ? ? ? ? ? ? ISOPLUS220TM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC) E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C15 A

5.3. ixtc220n055t.pdf Size:187K _ixys

IXTC200N075T
IXTC200N075T

Preliminary Technical Information IXTC220N055T VDSS = 55 V TrenchMVTM ID25 = 130 A Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1

5.4. ixtc220n075t.pdf Size:186K _ixys

IXTC200N075T
IXTC200N075T

Preliminary Technical Information IXTC220N075T VDSS = 75 V TrenchMVTM ID25 = 115 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 1

5.5. ixtc240n055t.pdf Size:187K _ixys

IXTC200N075T
IXTC200N075T

Preliminary Technical Information IXTC240N055T VDSS = 55 V TrenchMVTM ID25 = 132 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS240 (IXTC) E153432 VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25C 1

Datasheet: IXTB30N100L , IXTB62N50L , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T , IXTC180N10T , J113 , IXTC200N085T , IXTC200N10T , IXTC220N055T , IXTC220N075T , IXTC230N085T , IXTC240N055T , IXTC250N075T , IXTC26N50P .

 


IXTC200N075T
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