All MOSFET. IXTH20P50P Datasheet

 

IXTH20P50P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH20P50P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 406 nS

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO247

IXTH20P50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH20P50P Datasheet (PDF)

4.1. ixth20n60 ixtm20n60.pdf Size:105K _ixys

IXTH20P50P
IXTH20P50P

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A ? RDS(on) = 0.35 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25C, pulse width limited by T

4.2. ixth200n085t ixtq200n085t.pdf Size:205K _ixys

IXTH20P50P
IXTH20P50P

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V ID25 TC = 25 C 200 A ILRMS Lead Current Limit,

 4.3. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

IXTH20P50P
IXTH20P50P

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4.4. ixta20n65x ixth20n65x ixtp20n65x.pdf Size:231K _ixys

IXTH20P50P
IXTH20P50P

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X   RDS(on)    210m     IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VG

 4.5. ixth200n075t ixtq200n075t.pdf Size:184K _ixys

IXTH20P50P
IXTH20P50P

Preliminary Technical Information IXTH200N075T VDSS = 75 V Trench Gate IXTQ200N075T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 200 A ILRMS Lead Current Limit, RMS 7

Datasheet: IXTH180N10T , IXTH182N055T , IXTH1N100 , IXTH1N250 , IXTH200N075T , IXTH200N085T , IXTH200N10T , IXTH20N50D , 2N4416 , IXTH220N055T , IXTH220N075T , IXTH22N50P , IXTH230N085T , IXTH240N055T , IXTH24N50L , IXTH24N50Q , IXTH24P20 .

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