All MOSFET. IXTH40N50L2 Datasheet

 

IXTH40N50L2 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH40N50L2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 540 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 500 nS

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: TO247

IXTH40N50L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH40N50L2 Datasheet (PDF)

3.1. ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf Size:55K _ixys

IXTH40N50L2
IXTH40N50L2

VDSS ID25 RDS(on) Ω Ω IXTH/IXTM 35 N30 300 V 35 A 0.10 Ω Ω Ω MegaMOSTMFET Ω IXTH 40 N30 300 V 40 A 0.085 Ω Ω Ω Ω Ω IXTM 40 N30 300 V 40 A 0.088 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Tra

3.2. ixth35n30 ixth40n30 ixtm40n30.pdf Size:107K _ixys

IXTH40N50L2
IXTH40N50L2

VDSS ID25 RDS(on) MegaMOSTMFET ? ? IXTH 35N30 300 V 35 A 0.10 ? ? ? ? IXTH 40N30 300 V 40 A 0.085 ? ? ? ? ? IXTM 40N30 300 V 40 A 0.088 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 M? 300 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C 35N30 35 A

5.1. ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf Size:378K _ixys

IXTH40N50L2
IXTH40N50L2

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5.2. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf Size:154K _ixys

IXTH40N50L2
IXTH40N50L2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 ? ? RDS(on) ? ? ? 270m? ? ? ? ? IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to

5.3. ixth440n055t2 tt440n055t2.pdf Size:187K _ixys

IXTH40N50L2
IXTH40N50L2

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 ? ? RDS(on) ? ? ? 1.8m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C, RGS = 1M? 55 V VGSS Continuous 20 V VGSM Transient 3

5.4. ixtp450p2 ixth450p2 ixtq450p2.pdf Size:111K _ixys

IXTH40N50L2
IXTH40N50L2

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 ? ? RDS(on) ? ? ? 330m? ? ? ? ? IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Co

Datasheet: IXTH32P20T , IXTH360N055T2 , IXTH36N50P , IXTH36P10 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IXTH3N150 , IRFZ44A , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 , IXTH44P15T , IXTH450P2 , IXTH460P2 , IXTH48N20 , IXTH48P20P .

 


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