All MOSFET. IXTK32P60P Datasheet

 

IXTK32P60P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTK32P60P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 890 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 32 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 480 nS

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: TO264

IXTK32P60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTK32P60P Datasheet (PDF)

5.1. ixtk33n50.pdf Size:92K _ixys

IXTK32P60P
IXTK32P60P

IXTK 33N50 VDSS = 500 V High Current ID (cont) = 33 A MegaMOSTMFET Ω RDS(on) = 0.17 Ω Ω Ω Ω N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V D (TAB) G D ID25 TC = 25°C 33 A S IDM TC = 25°C, pulse

5.2. ixtk33n45 ixtk33n50.pdf Size:74K _ixys

IXTK32P60P
IXTK32P60P



Datasheet: IXTK17N120L , IXTK180N15 , IXTK180N15P , IXTK200N10L2 , IXTK200N10P , IXTK20N140 , IXTK22N100L , IXTK250N10 , STF5N52U , IXTK34N80 , IXTK40P50P , IXTK46N50L , IXTK550N055T2 , IXTK5N250 , IXTK600N04T2 , IXTK60N50L2 , IXTK62N25 .

 


IXTK32P60P
  IXTK32P60P
  IXTK32P60P
 

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