All MOSFET. IXTN40P50P Datasheet

 

IXTN40P50P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTN40P50P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 890 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 477 nS

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: SOT227

IXTN40P50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTN40P50P Datasheet (PDF)

5.1. ixtn46n50l.pdf Size:85K _ixys

IXTN40P50P
IXTN40P50P

Preliminary Technical Information IXTN46N50L VDSS = 500 V Linear Power MOSFET ID25 = 46 A With Extended FBSOA D ? ? RDS(on) ? ? ? 0.16 ? ? ? ? ? N-Channel Enhancement Mode G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXTN) E153432 VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V S G VGS Continuous 30 V VGSM Transient 40 V ID25 T

Datasheet: IXTN170P10P , IXTN17N120L , IXTN200N10L2 , IXTN200N10T , IXTN22N100L , IXTN30N100L , IXTN320N10T , IXTN32P60P , 2SK3568 , IXTN46N50L , IXTN550N055T2 , IXTN5N250 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 .

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