All MOSFET. IXTT50P085 Datasheet

 

IXTT50P085 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTT50P085

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 180 nS

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO268

IXTT50P085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTT50P085 Datasheet (PDF)

4.1. ixth500n04t2 ixtt500n04t2.pdf Size:187K _ixys

IXTT50P085
IXTT50P085

Advance Technical Information TrenchT2TM VDSS = 40V IXTH500N04T2 ID25 = 500A Power MOSFET IXTT500N04T2 ? ? RDS(on) ? ? ? 1.6m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C40 V VDGR TJ = 25C to 175C, RGS = 1M? 40 V TO-268 (IXTT) VGSM Transient 20 V ID25 T

5.1. ixtq52n30p ixtt52n30p.pdf Size:168K _ixys

IXTT50P085
IXTT50P085

IXTQ52N30P VDSS = 300 V PolarHTTM IXTT52N30P ID25 = 52 A Power MOSFET ? ? RDS(on) ? 66 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C52 A D (TAB) S IDM TC = 25 C, pulse width l

Datasheet: IXTT30N60P , IXTT360N055T2 , IXTT36N50P , IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IRFP4227 , IXTT50P10 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 , IXTT64N25P , IXTT68P20T , IXTT69N30P , IXTT6N120 .

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