All MOSFET. IXTY18P10T Datasheet

 

IXTY18P10T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTY18P10T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 62 nS

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO252

IXTY18P10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTY18P10T Datasheet (PDF)

5.1. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

IXTY18P10T
IXTY18P10T

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150

5.2. ixtp1r6n50p ixty1r6n50p.pdf Size:91K _ixys

IXTY18P10T
IXTY18P10T

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET ? ? RDS(on) ? 6.5 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25C 1.6 A IDM TC = 25C, pulse width li

5.3. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

IXTY18P10T
IXTY18P10T

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 TC = 25C 750 mA TO-2

5.4. ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf Size:179K _ixys

IXTY18P10T
IXTY18P10T

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 ? ? RDS(on) ? 2.3? ? ? ? ? ? ? IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25C 100 W D (Tab) TJ - 55 ... +150 C TJM 15

Datasheet: IXTY02N50D , IXTY05N100 , IXTY08N100D2 , IXTY08N100P , IXTY08N50D2 , IXTY10P15T , IXTY12N06T , IXTY15P15T , 75339P , IXTY1N100P , IXTY1N80 , IXTY1N80P , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P .

 


IXTY18P10T
  IXTY18P10T
  IXTY18P10T
 

social 

LIST

Last Update

MOSFET: IRLIZ44NPBF | IRLIZ44GPBF | IRLIZ34NPBF | IRLIZ34GPBF | IRLIZ24NPBF | IRLIZ14GPBF | IRLIB9343PBF | IRLIB4343 | IRLI640GPBF | IRLI630GPBF | IRLI620GPBF | IRLI540NPBF | IRLI540GPBF | IRLI540G | IRLI530GPBF |