All MOSFET. FCP110N65F Datasheet

 

FCP110N65F MOSFET. Datasheet pdf. Equivalent

Type Designator: FCP110N65F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 357 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO220

FCP110N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP110N65F Datasheet (PDF)

1.1. fcp110n65f.pdf Size:703K _fairchild_semi

FCP110N65F
FCP110N65F

August 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98

5.1. fcp11n60n fcpf11n60nt.pdf Size:2711K _fairchild_semi

FCP110N65F
FCP110N65F

August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299? Features Description RDS(on) = 0.255? ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi based tec

5.2. fcp11n60 fcpf11n60.pdf Size:621K _fairchild_semi

FCP110N65F
FCP110N65F

December 2008 TM SuperFET FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150C from Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32? gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. Low effective o

5.3. fcp11n60f fcpf11n60f.pdf Size:620K _fairchild_semi

FCP110N65F
FCP110N65F

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance. Ultra Lo

5.4. fcp11n60.pdf Size:1820K _fairchild_semi

FCP110N65F
FCP110N65F

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET® MOSFET is Fairchild Semiconductor’s first • 650V @Tj = 150°C genera-tion of high voltage super-junction (SJ) MOSFET • Typ. Rds(on)=0.32Ω family that is utilizing charge balance technology for • Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge • Low effective outpu

Datasheet: IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , FCH110N65F , IRF9530 , MMIX1F520N075T2 , MMIX1T550N055T2 , MMIX1T600N04T2 , VBH40-05B , VHM40-06P1 , VKM40-06P1 , VKM60-01P1 , VMK165-007T .

 


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