All MOSFET. BLF647 Datasheet

 

BLF647 MOSFET. Datasheet pdf. Equivalent

Type Designator: BLF647

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 28 V

Maximum Drain Current |Id|: 18 A

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: SOT540A

BLF647 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF647 Datasheet (PDF)

1.1. blf647.pdf Size:127K _philips

BLF647
BLF647

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification 2001 Nov 27 Supersedes data of 2001 Aug 02 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain PIN DESCRIPTION • Easy power control 1 drain 1 • Excellent ruggedness 2 drain 2 • Source on underside eliminates DC is

5.1. blf645.pdf Size:164K _philips

BLF647
BLF647

BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital ap

5.2. blf642.pdf Size:555K _nxp

BLF647
BLF647

BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications

Datasheet: BLF571 , BLF573 , BLF573S , BLF574 , BLF578 , BLF578XR , BLF642 , BLF645 , APT50M38JLL , BLF6G10-135RN , BLF6G10-160RN , BLF6G10-200RN , BLF6G10-45 , BLF6G10L-260PRN , BLF6G10L-40BRN , BLF6G10LS-135RN , BLF6G10LS-160RN .

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