All MOSFET. BLF6G21-10G Datasheet

 

BLF6G21-10G MOSFET. Datasheet pdf. Equivalent

Type Designator: BLF6G21-10G

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 10 W

Maximum Drain-Source Voltage |Vds|: 28 V

Maximum Drain Current |Id|: 3.1 A

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: SOT538A

BLF6G21-10G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF6G21-10G Datasheet (PDF)

1.1. blf6g21-10g.pdf Size:82K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G21-10G Power LDMOS transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase =25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR (MHz) (V) (W) (dB) (%)

4.1. blf6g22-180pn blf6g22ls-180pn.pdf Size:150K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp

4.2. blf6g22-45.pdf Size:71K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G22-45 Power LDMOS transistor Rev. 02 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR (MHz) (V) (W)

4.3. blf6g22-180rn blf22ls-180rn.pdf Size:98K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D I

4.4. blf6g27-45 blf6g27s-45.pdf Size:124K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 15 December 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR885k ACP

4.5. blf6g27-100 blf6g27ls-100.pdf Size:299K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR88

4.6. blf6g20-180rn blf20ls-180rn.pdf Size:103K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D I

4.7. blf6g22s-45.pdf Size:68K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G22S-45 Power LDMOS transistor Rev. 02 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR (MHz) (V) (W)

4.8. blf6g27-75 6g27ls-75.pdf Size:277K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp ?D ACPR88

4.9. blf6g27l-50bn blf6g27ls-50bn.pdf Size:218K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp

4.10. blf6g20-45 blf6g20s-45.pdf Size:81K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR

4.11. blf6g20-75 blf6g20ls-75.pdf Size:93K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR

4.12. blf6g20-180pn.pdf Size:84K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G20-180PN Power LDMOS transistor Rev. 03 30 March 2009 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR (MHz) (V)

4.13. blf6g27-135 blf6g27ls-135.pdf Size:92K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p) Gp ?D

4.14. blf6g20-230prn blf6g20s-230prn.pdf Size:137K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV)

4.15. blf6g20-40.pdf Size:76K _philips

BLF6G21-10G
BLF6G21-10G

BLF6G20-40 Power LDMOS transistor Rev. 01 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D ACPR (MHz) (V) (W

4.16. blf6g20-110 blf6g20ls-110.pdf Size:82K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) G

4.17. blf6g22l-40bn.pdf Size:306K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD ACPR (MH

4.18. blf6g22ls-100.pdf Size:276K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD IMD3 A

4.19. blf6g20ls-140.pdf Size:67K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD IMD3 A

4.20. blf6g27-10 blf6g27-10g.pdf Size:276K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 4 — 16 December 2014 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation

4.21. blf6g22l-40p 6g22ls-40p.pdf Size:176K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 — 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

4.22. blf6g22ls-130.pdf Size:80K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD IMD3 ACPR

4.23. blf6g27l-40p 27ls-40p 27ls-40pg.pdf Size:251K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G27L-40P; BLF6G27LS-40P(G) Power LDMOS transistor Rev. 3 — 14 January 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source

4.24. blf6g22ls-75.pdf Size:135K _nxp

BLF6G21-10G
BLF6G21-10G

BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD IMD3 ACPR

Datasheet: BLF6G20-45 , BLF6G20-75 , BLF6G20LS-110 , BLF6G20LS-140 , BLF6G20LS-180RN , BLF6G20LS-75 , BLF6G20S-230PRN , BLF6G20S-45 , IRFP250 , BLF6G22-180PN , BLF6G22-180RN , BLF6G22-45 , BLF6G22L-40BN , BLF6G22L-40P , BLF6G22LS-100 , BLF6G22LS-130 , BLF6G22LS-180PN .

 


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