All MOSFET. BLF7G27L-100 Datasheet

 

BLF7G27L-100 MOSFET. Datasheet pdf. Equivalent

Type Designator: BLF7G27L-100

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 28 V

Maximum Drain Current |Id|: 28 A

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SOT502A

BLF7G27L-100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF7G27L-100 Datasheet (PDF)

1.1. blf7g27l-100 blf7g27ls-100.pdf Size:165K _philips

BLF7G27L-100
BLF7G27L-100

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VD

1.2. blf7g27l-75p blf7g27ls-75p.pdf Size:289K _philips

BLF7G27L-100
BLF7G27L-100

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(

1.3. blf7g27l-150p 7g27ls-150p.pdf Size:304K _philips

BLF7G27L-100
BLF7G27L-100

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

1.4. blf7g27l-135.pdf Size:273K _nxp

BLF7G27L-100
BLF7G27L-100

BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp

1.5. blf7g27l-200pb.pdf Size:300K _nxp

BLF7G27L-100
BLF7G27L-100

BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV)

1.6. blf7g27l-90p blf7g27ls-90p.pdf Size:972K _nxp

BLF7G27L-100
BLF7G27L-100

BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

1.7. blf7g27l-140 7g27ls-140.pdf Size:171K _nxp

BLF7G27L-100
BLF7G27L-100

BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

Datasheet: BLF7G22LS-130 , BLF7G22LS-160 , BLF7G22LS-200 , BLF7G22LS-250P , BLF7G24L-100 , BLF7G24L-140 , BLF7G24LS-100 , BLF7G24LS-140 , 40673 , BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 .

 


BLF7G27L-100
  BLF7G27L-100
  BLF7G27L-100
 

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