All MOSFET. BUK652R1-30C Datasheet

 

BUK652R1-30C MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK652R1-30C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 263 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm

Package: TO220AB

BUK652R1-30C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK652R1-30C Datasheet (PDF)

3.1. buk652r6-40c.pdf Size:349K _philips

BUK652R1-30C
BUK652R1-30C

BUK652R6-40C N-channel TrenchMOS FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automoti

3.2. buk652r0-30c.pdf Size:183K _philips

BUK652R1-30C
BUK652R1-30C

BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

3.3. buk652r3-40c.pdf Size:375K _philips

BUK652R1-30C
BUK652R1-30C

BUK652R3-40C N-channel TrenchMOS intermediate level FET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

3.4. buk652r7-30c.pdf Size:369K _philips

BUK652R1-30C
BUK652R1-30C

BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

Datasheet: BUK624R5-30C , BUK625R0-40C , BUK625R2-30C , BUK626R2-40C , BUK6507-55C , BUK6507-75C , BUK6510-75C , BUK652R0-30C , IRF540 , BUK652R3-40C , BUK652R6-40C , BUK653R2-55C , BUK653R3-30C , BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C .

 


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