All MOSFET. BUK6E3R2-55C Datasheet

 

BUK6E3R2-55C MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK6E3R2-55C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 306 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Package: I2PAK

BUK6E3R2-55C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK6E3R2-55C Datasheet (PDF)

1.1. buk6e3r2-55c.pdf Size:181K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

3.1. buk6e3r4-40c.pdf Size:350K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfo

5.1. buk6e2r0-30c.pdf Size:181K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.2. buk6e2r3-40c.pdf Size:373K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

Datasheet: BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , 2SK3569 , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE , BUK7107-55ATE , BUK7108-40AIE .

 


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