All MOSFET. BUK7540-100A Datasheet

 

BUK7540-100A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7540-100A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 138 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220AB

BUK7540-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7540-100A Datasheet (PDF)

1.1. buk7540-100a 1.pdf Size:87K _philips

BUK7540-100A
BUK7540-100A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7540-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT Standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V ’trench’ technology which features ID Drain current (DC) 37 A very low on-state resistance.

1.2. buk7540-100a.pdf Size:227K _philips

BUK7540-100A
BUK7540-100A

BUK7540-100A N-channel TrenchMOS standard level FET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

 4.1. buk754r3-40b buk764r3-40b.pdf Size:297K _philips

BUK7540-100A
BUK7540-100A

BUK75/764R3-40B TrenchMOS™ standard level FET Rev. 01 — 09 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK754R3-40B in SOT78 (TO-220AB) BUK764R3-40B in SOT404 (D2-PAK). 1.2 Features Very low on-state re

4.2. buk754r3-75c buk7e4r3-75c.pdf Size:273K _philips

BUK7540-100A
BUK7540-100A

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 °C rated Standard leve

 4.3. buk754r0-55b buk764r0-55b.pdf Size:101K _philips

BUK7540-100A
BUK7540-100A

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Standard level c

Datasheet: BUK7528-100A , BUK7528-55A , BUK752R3-40C , BUK752R7-30B , BUK7535-100A , BUK7535-55A , BUK753R1-40B , BUK753R4-30B , IRFP4229 , BUK754R0-40C , BUK754R0-55B , BUK754R3-40B , BUK754R3-75C , BUK755R2-40B , BUK7575-100A , BUK7575-55A , BUK7604-40A .

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