View 2sa1967 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions · High breakdown voltage (VCEO min=–900V). unit:mm · Small Cob (Cob typ=2.2pF). 2010C · High reliability (Adoption of HVP process). [2SA1967] JEDEC : TO-220AB 1 : Base EIAJ : SC46 2 : Collector Specifications 3 : Emitter Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –900 V Collector-to-Emitter Voltage VCEO –900 V Emitter-to-Base Voltage VEBO –7 V Collector Current IC –10 mA Collector Current (Pulse) ICP –30 mA Collector Dissipation PC 1.75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics
Keywords
2sa1967 Datasheet, Design, MOSFET, Power
2sa1967 RoHS, Compliant, Service, Triacs, Semiconductor
2sa1967 Database, Innovation, IC, Electricity
