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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bup203

BUP 203 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 203 1000V 23A TO-220 AB Q67078-A4402-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1000 V Collector-gate voltage VCGR RGE = 20 k? 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 23 TC = 90 °C 15 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 46 TC = 90 °C 30 Avalanche energy, single pulse EAS mJ IC = 10 A, VCC = 24 V, RGE = 25 ? L = 3 mH, Tj = 25 °C 20 Power dissipation Ptot W TC = 25 °C 165 Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 Dec-

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 bup203 Datasheet, Design, MOSFET, Power

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