All Transistors. Equivalents Search

View cs2300 sot-23 detailed specification:

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2300 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 V ID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.5 0.75 1.2 V Gate-body Leakage IGSS VDS=0V, VGS= 10V 100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA VGS=2.5V, ID=2.5A 37 59 m Drain-Source On-Res... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 cs2300 sot-23.pdf Design, MOSFET, Power

 cs2300 sot-23.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cs2300 sot-23.pdf Database, Innovation, IC, Electricity