All Transistors. Equivalents Search

 

View ced6861 ceu6861 detailed specification:

ced6861_ceu6861ced6861_ceu6861

CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -12 A Drain Current-Pulsed a IDM -48 A Maximum Power Dissipation @ TC = 25 C 31 W PD - Derate above 25 C 0.25 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 4 C/W Thermal Resistance, Junction-to-Ambient R J... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 ced6861 ceu6861.pdf Design, MOSFET, Power

 ced6861 ceu6861.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ced6861 ceu6861.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.