All Transistors. Equivalents Search

View cep14g04 ceb14g04 detailed specification:

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V Drain Current-Continuous @ TC = 25 C 140 A ID @ TC = 100 C A 97 Drain Current-Pulsed a IDM 560 A Maximum Power Dissipation @ TC = 25 C 100 W PD 0.8 W/ C - Derate above 25 C Single Pulsed Avalanche Energy e EAS 320 mJ Single Pulsed Avalanche Current e IAS 80 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 cep14g04 ceb14g04.pdf Design, MOSFET, Power

 cep14g04 ceb14g04.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cep14g04 ceb14g04.pdf Database, Innovation, IC, Electricity