All Transistors. Equivalents Search

View cep830g ceb830g cef830g detailed specification:

CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP830G 500V 1.5 5A 10V CEB830G 500V 1.5 5A 10V CEF830G 500V 1.5 5A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS V 30 Drain Current-Continuous ID 5 5e A Drain Current-Pulsed a IDM f 20 20 e A Maximum Power Dissipation @ TC = 25 C 83 42 W PD - Derate above 25 C 0.66 0.33 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Jun... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 cep830g ceb830g cef830g.pdf Design, MOSFET, Power

 cep830g ceb830g cef830g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cep830g ceb830g cef830g.pdf Database, Innovation, IC, Electricity