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View ceu6060n ced6060n detailed specification:

CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 34 A Drain Current-Pulsed a IDM 136 A Maximum Power Dissipation @ TC = 25 C 62.5 W PD - Derate above 25 C 0.42 W/ C Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 2.4 C/W Thermal Resistance, Junction-to-Ambient R JA 50 C/W Rev 1. 2008.Sep. Detail... See More ⇒

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