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View cs6n70 a3d1-g detailed specification:

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Silicon N-Channel Power MOSFET R CS6N70 A3D1-G General Description VDSS 700 V CS6N70 A3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features Fast Switching ESD Improved Capability Low Gate Charge (Typical Data 21nC) Low Reverse transfer capacitances(Typical 5pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. Absolute Tc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS Drain-to... See More ⇒

 

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 cs6n70 a3d1-g.pdf Design, MOSFET, Power

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