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View bc237 detailed specification:

BC237/238/239 Switching and Amplifier Applications Low Noise BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC237 50 V BC238/239 30 V VCEO Collector-Emitter Voltage BC237 45 V BC238/239 25 V VEBO Emitter-Base Voltage BC237 6 V BC238/239 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage BC237 IC=2mA, IB=0 45 V BC238/239 25 V BVEBO Emitter Base Breakdown Voltage BC237 IE=1 A, IC=0 6 V BC238/239 5 V ICES Collector Cut-off Current BC237 V... See More ⇒

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