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View bc635 bc637 bc639 detailed specification:

BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC635 45 V BC637 60 V BC639 100 V VCES Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 V VCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A ICP Peak Collector Current 1.5 A IB Base Current 100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 150 C PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Volt... See More ⇒

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